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Title:
半導体装置、及びそれを用いた放射線検出器
Document Type and Number:
Japanese Patent JP4138529
Kind Code:
B2
Abstract:
A wiring substrate 20, comprising a glass substrate, formed by integrally bundling a plurality of glass fibers and provided with through holes 20c, and conductive members 21, disposed at through holes 20c, is used. Input portions 21a of conductive members 21, formed on an input surface 20a of this wiring substrate 20, are connected to bump electrodes 17, which are provided on an output surface 15b of a PD array 15 in one-to-one correspondence with respect to conductive members 21, thereby arranging a semiconductor device 5. A radiation detector is arranged by connecting a scintillator 10 via an optical adhesive agent 11 to a light-incident surface 15a of PD array 15 and connecting a signal processing element 30 via bump electrodes 31 to output surface 20b of wiring substrate 20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.

Inventors:
Katsumi Shibayama
Yasushi Kusuyama
Masahiro Hayashi
Application Number:
JP2003046141A
Publication Date:
August 27, 2008
Filing Date:
February 24, 2003
Export Citation:
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Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
G01T1/20; H01L21/60; G01T1/24; G01T7/00; H01L23/13; H01L27/14; H01L31/09; H05K3/00; H05K1/03; H05K3/34
Domestic Patent References:
JP10275984A
JP11121648A
JP2003264280A
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki



 
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