Title:
半導体装置、半導体装置の読み出し方法、及び半導体装置を搭載したＩＣカード
Document Type and Number:
Japanese Patent JP6674616
Kind Code:
B2
Abstract:
A semiconductor device includes a memory cell; circuitry that generates a reference voltage; and a sense amplifier including a first input terminal electrically connected to the memory cell, and a second input terminal electrically connected to the circuitry. The sense amplifier obtains a value in correlation with a resistance value of the memory cell based on a comparison between a sense voltage applied to the first input terminal and the reference voltage applied to the second input terminal. The sense voltage changes at a speed in correlation with the resistance value of the memory cell. In at least part of a period during which the sense voltage changes, the circuitry causes the reference voltage to change in a direction opposite to a direction in which the sense voltage changes.
Inventors:
Ryotaro Higashi
Keiichi Kato
Keiichi Kato
Application Number:
JP2016093820A
Publication Date:
April 01, 2020
Filing Date:
May 09, 2016
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
G11C13/00
Domestic Patent References:
| JP2008276828A |
Foreign References:
| WO2006085459A1 | ||||
| WO2014132664A1 |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Michi Kajitani
Akiko Miyake
Hidetaka Okabe
Tohru Kawakita
Yu Tanaka
Murase Nariyasu
Osamu Kita
Michi Kajitani
Akiko Miyake
Hidetaka Okabe
Tohru Kawakita
Yu Tanaka
Murase Nariyasu