Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2022037706
Kind Code:
A
Abstract:
To provide a semiconductor device in which off leak current and current collapse can be suppressed, and a manufacturing method for the same.SOLUTION: A semiconductor device includes a substrate of AlN, a semiconductor multilayer structure including an electron transit layer and an electron supply layer of a nitride semiconductor provided over the substrate, and a gate electrode, a source electrode, and a drain electrode over the electron supply layer. The electron transit layer exists in the lowermost layer of the semiconductor multilayer structure. The gate electrode has a gate length of 0.3 μm or less. The ratio of the thickness of the semiconductor multilayer structure to the gate length of the gate electrode is 4.0 or less.SELECTED DRAWING: Figure 2
Inventors:
OZAKI SHIRO
KOTANI JUNJI
YAMADA ATSUSHI
KOTANI JUNJI
YAMADA ATSUSHI
Application Number:
JP2020141973A
Publication Date:
March 09, 2022
Filing Date:
August 25, 2020
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito