Title:
半導体デバイス及びその製造方法
Document Type and Number:
Japanese Patent JP6790255
Kind Code:
B2
Abstract:
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor layer; a source electrode, a drain electrode and a gate electrode located between the source electrode and the drain electrode disposed on a side of the semiconductor layer; at least two dielectrics located between the gate electrode and the drain electrode, wherein a dielectric coefficient of a dielectric adjacent to the gate electrode is greater than that of a dielectric away from the gate electrode and adjacent to the drain electrode.
Inventors:
Lee Yuan
Application Number:
JP2019520712A
Publication Date:
November 25, 2020
Filing Date:
March 02, 2018
Export Citation:
Assignee:
GPOWER SEMICONDUCTOR,INC.
International Classes:
H01L21/336; H01L21/338; H01L29/41; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2017054960A | ||||
| JP2006128646A | ||||
| JP2014003222A | ||||
| JP2006222393A |
Foreign References:
| CN105140288A | ||||
| US20170077284 | ||||
| US20060065911 | ||||
| US9082836 |
Attorney, Agent or Firm:
try international patent corporation