Title:
SEMICONDUCTOR DICING METHOD
Document Type and Number:
Japanese Patent JP3293930
Kind Code:
B2
Abstract:
PURPOSE: To prevent silver which has been once cut at the part of thick plating without a remarkable decrease of production, from being again fused by the heat at the time of cutting.
CONSTITUTION: The feed speed of a blade 1 is set as follows; cutting is started from the one end L at a moving speed of 16mm/s, the speed is gradually increased, a semiconductor wafer 2 from a specified position L to a specified position L is cut at a speed of 40mm/s, the speed is gradually decreased from the specified position L, and the cutting is finished at the other end L of the semiconductor wafer 2, when the moving speed is 16mm/s. That is, the cutting speed is gradually increased at the beginning of cutting, and gradually decreased at the ending of cutting, so that the part of thick silver plating is slowly cut and the heat generated by cutting is sufficiently cooled by using cooling water. Thereby the silver-plated part can be prevented from fusing again, and the generation ratio of half-cut caused by that the silver-plated part again fuses is reduced from about 9% to about 0.55%.
More Like This:
| JP2000237917 | METHOD AND DEVICE FOR CUTTING METAL TUBE |
| JP2020001153 | GEOTHERMAL INDUSTRIAL PROCESSING DEVICE |
| JP5835611 | Sliding desktop cutting machine |
Inventors:
Tetsuro Oki
Yoshio Murakami
Yoshio Murakami
Application Number:
JP3974293A
Publication Date:
June 17, 2002
Filing Date:
March 01, 1993
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
B23D47/08; B23D59/02; B28D5/02; H01L21/301; H01L21/302; H01L21/78; (IPC1-7): H01L21/301
Domestic Patent References:
| JP61290008A | ||||
| JP53127265A | ||||
| JP4258150A | ||||
| JP63256408A | ||||
| JP4158548A |