SEMICONDUCTOR DRIVE DEVICE

Japanese Patent JP2018082599

A

PROBLEM TO BE SOLVED: To provide a semiconductor drive device capable of protecting a semiconductor element with certainty by suppressing a voltage applied to the semiconductor element before being applied with an overvoltage.SOLUTION: A semiconductor drive device 10 has a structure in which a semiconductor element 12, a snubber circuit 40, and an overcurrent detection circuit 50 are provided at a primary side 15 of a transformer 13. The snubber circuit 40 is connected between a pair of output terminals D1 and S1 of the semiconductor element 12, and adjusts a voltage value at a secondary side 16 of the transformer 13. The overcurrent detection circuit 50 detects an overcurrent flowing in the semiconductor element 12. The semiconductor drive device 10 comprises an electrostatic capacitance increasing part 90 connected between the output terminals D1 and S1, and that increases an electrostatic capacitance between the output terminals D1 and S1. In addition, by operating the electrostatic capacitance increasing part 90, a voltage applied to the semiconductor element 12 is suppressed.SELECTED DRAWING: Figure 2

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YANASE YASUYUKI
GONDO KIICHI
SUGIURA TETSUJI
HANEISHI SHINICHIRO
TAKAGI KEIJI

JP2016225339A

May 24, 2018

November 18, 2016

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NGK SPARK PLUG CO

H02M1/34; H02M1/08; H03K17/08; H03K17/0812; H03K17/16; H03K17/691

Hisahiko Atsumi

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