Title:
半導体力学量センサとその製造方法
Document Type and Number:
Japanese Patent JP4238437
Kind Code:
B2
Abstract:
A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.
Inventors:
Kazuhiko Kano
Atsushi Ohara
Nobuyuki Oya
Atsushi Ohara
Nobuyuki Oya
Application Number:
JP30432399A
Publication Date:
March 18, 2009
Filing Date:
October 26, 1999
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G01L1/14; H01L29/84; B81B3/00; G01C19/56; G01C19/5656; G01P15/08; G01P15/125; G01P15/13; H01L21/28; H01L21/44
Domestic Patent References:
| JP7015019A | ||||
| JP11220139A | ||||
| JP11220140A | ||||
| JP8510094A | ||||
| JP8506857A |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda