SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE

Japanese Patent JP3683696

B2

PROBLEM TO BE SOLVED: To obtain a semiconductor element capable of having an extremely small projection area by a method wherein a conductive substance is formed on an internal electrode, then a semiconductor element is covered with a resin, including the side surface of the substrate, excepting a part of the conductive substance, and a part of the conductive substance which is not covered with the resin, but is exposed is made into an external electrode.
SOLUTION: A number of diodes having an internal electrode 2 and an active layer 3 is formed on a silicon board 1, and a tier of two golden ball 4 is fused on the internal electrode 2, and the golden ball 2 is crushed on the internal electrode 2 to make the total thickness of gold as 0.08 mm. And, after a thermosetting epoxy resin 5 is spin coated and hardened with a thickness to cover the golden ball 4, the surface of the golden ball 4 is exposed by grinding an upper face of the thermosetting epoxy resin 5. After that, a resin 7 is formed on the back of the silicon board 1, and a solder layer 8 is formed on an exposed surface of the spin coat 4.

Toshiaki Fukunaka
Hideki Araki
Kaoru Kuraki
Kenji Aoki
Matsui Yuuki

JP1695998A

August 17, 2005

January 29, 1998

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Asahi Kasei Electronics Co., Ltd.
Asahi Kasei Electronics Co., Ltd.

H01L21/60; H01L21/56; H01L23/12; H01L23/28; (IPC1-7): H01L21/60; H01L21/56; H01L23/12; H01L23/28

JP6342794A
JP6151650A
JP9330992A
JP9275107A
JP2284426A

Yoshikazu Tani

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