To provide a semiconductor element having a life longer than that of a conventional semiconductor element.

A semiconductor element consisting of a light-emitting diode 1 has semiconductor crystal layers 2 to 7 laminated so as to form more than one P-N junctions. An anode electrode 8 has a bonding region 8a on the surface thereof and has a contact region in contact with a P-type semiconductor crystal layer on the rear thereof. An oxide film layer 9, larger than that of the region 8a and opposes to the region 8a, is formed between the rear of the layer 8 and the layer 7. The layer 9 is formed of an SiO2 film of a thickness of 2000 angstroms or thicker.