Title:
SEMICONDUCTOR ELEMENT FOR POWER
Document Type and Number:
Japanese Patent JP2002299622
Kind Code:
A
Abstract:
To provide a semiconductor element for power, which has high breakdown voltage and low on-resistance, which can perform a high speed operation and has low switching loss.
In power MOSFET having a p+-type burying layer 9 in an n--type drift layer 1, a p+-type pull-out layer 10 is formed on the same surface as a p-type base layer 4. A third electrode 11 is formed and current is made to flow in the p+-type burying layer 9 or a p--type reserve layer 15 is formed and a hole is injected from the p-type base layer 4. Thus, the p+-type burying layer 9 is speedily prevented from being depleted. Thus, turn-on time is shortened, the high speed operation is realized and switching loss is reduced.
Inventors:
SAITO WATARU
OMURA ICHIRO
OMURA ICHIRO
Application Number:
JP2001098211A
Publication Date:
October 11, 2002
Filing Date:
March 30, 2001
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/80; H01L29/78; (IPC1-7): H01L29/78; H01L29/80
Attorney, Agent or Firm:
Togawa Hideaki