Title:
半導体素子の保護装置
Document Type and Number:
Japanese Patent JP3990218
Kind Code:
B2
Abstract:
A protection apparatus for a semiconductor device includes a DC power source, a load, a semiconductor device arranged between the DC power source and the load and switches the load between a driving state and a stopping state, a comparator comparing a voltage drop across the semiconductor device with a predetermined reference voltage, and a cut off unit cutting a conduction of the semiconductor device between the DC power source and the load when the voltage drop is greater than the predetermined reference voltage. A constant of the circuit element is set so that the reference voltage is not greater than a critical voltage. The critical voltage is a product of the on-resistance of the semiconductor device when its channel temperature is at an upper limit of the permissible temperature, and a minimum current value which causes the channel temperature to reach the upper limit of the permissible temperature by the self-heating due to Joule heat.
Inventors:
Shunzo Oshima
Application Number:
JP2002204729A
Publication Date:
October 10, 2007
Filing Date:
July 12, 2002
Export Citation:
Assignee:
Yazaki Corporation
International Classes:
G05F1/10; H02H5/04; H03K17/14; H03K17/08; H03K17/082; H03K17/687
Domestic Patent References:
| JP6180332A | ||||
| JP2087817A | ||||
| JP2000235424A | ||||
| JP2001277937A |
Foreign References:
| WO2000079682A1 | ||||
| EP0890844A2 |
Attorney, Agent or Firm:
Hidekazu Miyoshi