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Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS57170587
Kind Code:
A
Abstract:

PURPOSE: To obtain a grown layer having good crystallinity with stable composition ratio by forming a groove on the grown surface of a crystal growing substrate, coinciding the wall surfaces at both sides of the groove with the bottom of the groove, thereby eliminating the flat surface of the bottom.

CONSTITUTION: A groove 2 formed on a substrate 1 so formed as to coincide at the bottom of the groove 2 with the both right and left side wall surfaces, thereby substantially eliminating the bottom surface of the goove 2. Thus, the quickly grown parts of the grown layer at both side surfaces A of the bottom 4 of the groove 2 can be reduced to one position coincided with both side wall surfaces. Accordingly, a solute which is abruptly supplied to the quick growth is sufficient with the diffusion supply only in the solution, and the melt back of the shoulder B of the groove can not almost be produced. A preferably crystal having no disorder in the resistivity in the vicinity of the groove 2 and no disorder in the crysrallinity can be obtained.


Inventors:
YAMAMOTO SABUROU
MURATA KAZUHISA
HAYASHI HIROSHI
TAKENAKA TAKUO
Application Number:
JP5597681A
Publication Date:
October 20, 1982
Filing Date:
April 13, 1981
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01L21/306; H01S5/00; H01S5/022; H01S5/02; H01S5/24; (IPC1-7): H01L21/306; H01S3/18
Other References:
APPLIED PHYSICS LETTERS=1980



 
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