Title:
Semiconductor emission device
Document Type and Number:
Japanese Patent JP6215525
Kind Code:
B2
Abstract:
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over a semiconductor epitaxial layer in order to emit various colored-lights including white light. The light-emitting device can include a semiconductor chip substrate configured not to transmit light emitted from the epitaxial layer and mounted on a mounting board, and a transparent resin layer located between the wavelength converting layer and the epitaxial layer mounted on the semiconductor chip substrate so as to extend from a side surface of the wavelength converting layer towards a substantially edge portion of the semiconductor chip substrate. The semiconductor light-emitting device can be configured to improve a color variability of a mixture light emitted from the device by using the transparent resin layer and the wavelength converting layer, and therefore can emit the mixture light having a substantially uniform color tone from a small light-emitting surface.
Inventors:
Goji Waraya
Application Number:
JP2012234038A
Publication Date:
October 18, 2017
Filing Date:
October 23, 2012
Export Citation:
Assignee:
Stanley Electric Co., Ltd.
International Classes:
H01L33/50
Domestic Patent References:
| JP2012516026A | ||||
| JP2012199411A | ||||
| JP2008199000A | ||||
| JP2012044043A | ||||
| JP2010092897A | ||||
| JP2011233650A | ||||
| JP2011187679A | ||||
| JP2010050235A | ||||
| JP2011159874A | ||||
| JP2012186494A |
Attorney, Agent or Firm:
Patent Business Corporation Sannozaka Patent Office
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