Title:
半導体装置
Document Type and Number:
Japanese Patent JP7084540
Kind Code:
B2
Abstract:
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.
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Inventors:
Suzawa Hideomi
Tetsuhiro Tanaka
Yuhei Sato
Yuro Tezuka
Sanpei Yamazaki
Tetsuhiro Tanaka
Yuhei Sato
Yuro Tezuka
Sanpei Yamazaki
Application Number:
JP2021184077A
Publication Date:
June 14, 2022
Filing Date:
November 11, 2021
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/8234; H01L21/8239; H01L21/8242; H01L27/06; H01L27/088; H01L27/105; H01L27/108; H01L27/1156; H01L29/423; H01L29/49; H01L51/50; H05B33/14
Domestic Patent References:
| JP2013145876A | ||||
| JP2013229587A | ||||
| JP2013239702A | ||||
| JP2013214732A |
Foreign References:
| US20130270563 | ||||
| US20130270552 |