PURPOSE: To provide a semiconductor evaluating equipment which can easily evaluate fine defect on the surface of a semiconductor wafer, and clarify the corresponding relation of impurities in the generation part of defect.

CONSTITUTION: A monochromatic X-ray beam (b) is made to enter the surface of a semiconductor wafer 7 at an angle smaller than or equal to the total reflection critical angle. Diffraction condition is so set that Bragg reflection is caused. Diffracted X-rays (c) are measured by a diffraction X-ray detector 11. The incident angle of the monochromatic X-ray beam (b) into the semiconductor wafer 7 surface becomes very small, and irradiation over a wide region is enabled. The crystal defect on the surface can be detected over a wide region, with high resolution. Fine defect on the wafer 7 surface can be easily estimated. The corresponding relation of impurities in the generation part of crystal defect is clarified, by measuring the energy spectrum of total reflection fluorescent X-rays from the semiconductor wafer 7 surface with a fluorescent X-ray detector 12 wherein changeover measurement is possible under the same measurement condition.