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Title:
SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET LIGHT
Document Type and Number:
Japanese Patent JP2012216854
Kind Code:
A
Abstract:

To provide an exposure device capable of supplying only EUV light to a mask, while eliminating another light other than the EUV light.

A multilayer film of Mo/Si is formed on a front surface of a mirror 510, and blazed grooves 513 are formed on the multilayer film. Light beams 203 and 301 made incident from an EUV light source device 1 are incident upon the mirror 510, and are reflected or diffracted. Since reflected EUV light 204 (including diffracted EUV light) and light 301A and 301B of other wavelengths have different reflection angles or different diffraction angles, their traveling directions are different. By eliminating the other light 301A and 301B with an aperture or a damper, it is possible to irradiate a mask 600 with EUV light having high purity.


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Inventors:
MORIYA MASATO
WAKABAYASHI OSAMU
GEORGE SOUMAGNE
Application Number:
JP2012132145A
Publication Date:
November 08, 2012
Filing Date:
June 11, 2012
Export Citation:
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Assignee:
GIGAPHOTON INC
International Classes:
H01L21/027; G02B5/08; G02B5/18; G02B5/28; G02B5/32; G02B19/00; G03F7/20; H05G2/00
Domestic Patent References:
JP2005302998A2005-10-27
JP2004506315A2004-02-26
JP2005142569A2005-06-02
JPH07297103A1995-11-10
JP2003084095A2003-03-19
JP2004108876A2004-04-08
JP2005049845A2005-02-24
JP2009272622A2009-11-19
Foreign References:
WO2009144117A12009-12-03
Attorney, Agent or Firm:
Hiroaki Sakai



 
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