Title:
SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, POWER AMPLIFIER INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2023134363
Kind Code:
A
Abstract:
To not only control a threshold voltage through the adjustment of the charge, but also maintain original advantages of various semiconductor field effect transistors through further reduction in the contact resistance and series resistance, as well as, with superior linearity being exhibited, further enhance latent value of the present invention applied to related fields of high-frequency power amplifiers.SOLUTION: There are provided a semiconductor device 200A which includes a GaN-based compound semiconductor field effect transistor, a power amplifier including the same, and a method of manufacturing the same, wherein: the transistor includes a substrate 210, a buffer layer 220, a channel block 230, a source electrode 240, a gate electrode 250, and a drain electrode 260; an n type doped layer 234 is provided at a position close to a border of a two-dimensional electron gas region 232G in the channel block 230; and the n type doped layer 234 varies a spatial distribution of electron density in the transistor to improve RF linearity of the whole component.SELECTED DRAWING: Figure 4
Inventors:
WU CHAN-SHIN
Application Number:
JP2023013661A
Publication Date:
September 27, 2023
Filing Date:
January 31, 2023
Export Citation:
Assignee:
ULTRABAND TECH INC
International Classes:
H01L21/338
Attorney, Agent or Firm:
Patent Attorney Corporation NIP&SBPJ International Patent Office
Previous Patent: Polymer compounds and light emitting devices using them
Next Patent: pulse wave sensor
Next Patent: pulse wave sensor