Title:
SEMICONDUCTOR GAS SENSOR
Document Type and Number:
Japanese Patent JP3857384
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor gas sensor which is simple in structure, can be manufactured safely, inexpensively and easily, and has high sensitivity and superior gas selectivity to chlorine, fluorine and ozone gas.
SOLUTION: The sensor is fomred of a composite metallic oxide primarily composed of magnesium(Mg), zinc(Zn) or indium(In), or indium oxide of Mg and In or Zn and In. The oxide is a composite metallic oxide of MgO-In2O3, ZnO-In2O3 or MgO-ZnO-In2O3, which is formed by adding a small amount of a composite oxide including at least one kind of In2O3 components whose composition lies in a composition area ABCD or at least one element other than the composing elements.
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Inventors:
Minamiuchitsugu
Toshihiro Miyata
Shinzo Takada
Toshihiro Miyata
Shinzo Takada
Application Number:
JP11415297A
Publication Date:
December 13, 2006
Filing Date:
March 27, 1997
Export Citation:
Assignee:
GUNZE LIMITED
International Classes:
G01N27/12; (IPC1-7): G01N27/12
Domestic Patent References:
| JP6082410A |
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