PURPOSE: To obtain the semiconductor integrated circuit for a temperature sensor which has little irregularity and is excellent in productivity by using a emitter-base junction as the temperature sensor and by connecting thereto a constant-current circuit of an insulated gate type transistor.
CONSTITUTION: When the collector of a bipolar transistor and the base are connected, base-emitter current I turns to be the same in property with the voltage current of a diode and is changed according to temperature. A source of constant current is connected to the bipolar transistor and fixed current is made to flow therethrough to measure base-emitter voltage, whereby it can be used as the temperature sensor. As the source of constant current, a constant-current circuit constituted by an integrated circuit of complementary insulated gate field-effect type is used. The device can be manufactured in the same IC manufacturing process with that of other elements and thereby irregularity of characteristics can be reduced.
KAMIYA MASAAKI
NAMIKI MASAYUKI
TANAKA KOJIROU
