Title:
SEMICONDUCTOR INTEGRATED CIRCUIT CAPACITOR AND ITS ELECTRODE STRUCTURE
Document Type and Number:
Japanese Patent JP3197782
Kind Code:
B2
Abstract:
PURPOSE: To prevent the diffusion of oxygen to an F-part semiconductor, and prevent the diffusion of semiconductor atoms into high permittivity material, by providing this capacitor with a specified metallic layer such that, it ohm- contacts with a semiconductor region, and providing this with its metallic oxide layer such that it ohm-contacts with this layer.
CONSTITUTION: The lower electrode structure 14 of a capacitor 10 contains three layers. That is, the first layer 31 contains Ru, Ir, Re, Rh, Os, Pd, and any one of those alloys made to ohm-contact with a semiconductor region 26, on the semiconductor region 26 and a dielectric layer 20. The second layer 32 contains any one of the oxides of the first layer 31 metal made to ohm- contact with the first layer 31. The third layer 33 includes Pt, Au, Ru, Ir, Re, Rh, Os, and Pd, which are made to ohm-contact with the second layer 32 on the dielectric layer 20 on the second layer 32 and the dielectric layer 20, and any one of those alloys.
Inventors:
Jerome John Cuomo
Richard Joseph Gambino
Alfred Grill
William Francis Cane
Donald Joseph Mikalsen
Richard Joseph Gambino
Alfred Grill
William Francis Cane
Donald Joseph Mikalsen
Application Number:
JP9707195A
Publication Date:
August 13, 2001
Filing Date:
April 21, 1995
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L27/115; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04; H01L27/105
Domestic Patent References:
| JP7263635A | ||||
| JP529567A | ||||
| JP65810A | ||||
| JP437170A | ||||
| JP799290A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)