To surely avoid corrosion of metal wirings or metal plugs formed by the COMPONENTS method.

A light shield layer 20 of e.g. a Cu film is formed above p-type semiconductor regions 4 constituting terminal resistance elements R, at the same time as a step of polishing the Cu film deposited to an upper part of an Si oxide film 21 by the CMP method to form second layer wirings 17-19, and has a wide area enough to cover approximately the entire p-type semiconductor region 4. By placing the light shield layer 20 above the p-type semiconductor region 4, the light incidence on the p-type semiconductor region 4 can be avoided in the step of polishing the Cu film by the CMP method to form the second layer wirings 17-19, and the corrosion of the wirings 17-19 due to a photo current generated by a light incident on the p-n junction is avoided.