To provide a semiconductor integrated circuit device that suppresses the increase of defect modes due to variance in inter-pad-rewiring resistance even when an operation speed becomes fast, and to provide a method of manufacturing the same.

A barrier-metal layer including a lower-layer titanium layer, an intermediate titanium nitride layer, and an upper-layer titanium layer is interposed between an aluminum-based pad 2p and rewiring 16 of a wafer-level-package type semiconductor integrated circuit device (LSI) and the thickness of the lower-layer titanium layer is made ≥5 to ≤60 nm so as to stabilize resistance between the aluminum-based pad 2p and rewiring 16.

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