Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JP3522248
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an IC in which an MOSFET being used as a power switch can be manufactured in the same process as that of MOSFET in the other circuit block and power consumption is reduced during standby by increasing a threshold voltage.
SOLUTION: A transistor switch for power supply comprises an MOSFET, a capacitor provided between a gate of the MOSFET and a first input terminal, and a ferroelectric capacitor provided between the gate of the MOSFET and a second input terminal. The threshold voltage of the MOSFET in the transistor switch for power supply is increased by applying a voltage of specified polarity between the first and second input terminals and polarizing the ferroelectric capacitor in a specified direction.
Inventors:
Fujimori, Takakazu
Application Number:
JP2001316700A
Publication Date:
April 26, 2004
Filing Date:
October 15, 2001
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L21/8234; H01L27/04; H01L27/06; H02M1/08; H03K17/22; H01L21/822; H03K19/00; H03K17/00; (IPC1-7): H01L21/822; H01L27/04; H02M1/08; H03K17/22; H03K19/00
Attorney, Agent or Firm:
紋田 誠 （外１名）
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