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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH03166822
Kind Code:
A
Abstract:

PURPOSE: To prevent a through current from being generated by providing a buffer circuit for a reference voltage deviated from the reference potential of emitter coupled logic(ECL) level on the input part of a circuit which converts the signal of (ECL) level into a CMOS level signal.

CONSTITUTION: An address buffer ADB generates the ECL level signal which has a -1.3V reference voltage, a -0.9V H level, and a -1.7V L level. The amplifier LVA for level conversion which is provided on the input part of the level converting circuit LVC has an about -1.5V reference voltage VRF between a reference voltage VBB and the L level. Therefore, when an external address signal is set to an intermediate level, the output of a wired OR WOR circuit also has an intermediate potential like the voltage VBB. An amplifier LVA, however, has the voltage VRF deviating to the L-level side, so the intermediate level like the voltage VBB is regarded as an H level to generate the output signal of level corresponding to the nonselection state of a word line. Consequently, no through current flows through the output-side MOSFETs Q2 and Q4 of the circuit LVC.


Inventors:
SAKAMOTO MASARU
TATENO MINORU
Application Number:
JP30697489A
Publication Date:
July 18, 1991
Filing Date:
November 27, 1989
Export Citation:
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Assignee:
HITACHI LTD
HITACHI MICROCUMPUTER ENG
International Classes:
G11C11/413; H01L27/10; H03K19/018; (IPC1-7): G11C11/413; H01L27/10; H03K19/018
Attorney, Agent or Firm:
Mitsumasa Tokuwaka



 
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