To improve the degree of integration and electrical characteristics of a semiconductor integrated circuit device.

In a semiconductor integrated circuit device, a recessed region, which contains an impurity at nearly the same concentration as that of the impurity in a P-type epitaxial layer 26 set at a ground potential and recessed in the horizontal direction against the layer 26, is formed in the surface-layer part of a horizontal diffusion region 28b by performing counter doping to the region 28b, which is produced when an N-type well region 29 is formed and the region on the recessed is expanded as a wirable region where wires, etc., can be laid. Consequently, even when wires 42, etc., are laid on the wirable region, the electrical characteristics of the semiconductor integrated circuit device is increased, because the parasitic capacitance between the wires 42, etc., and the N-type well region 28 where voltage fluctuation tends to occur is suppressed and more wires, etc., can be laid by effectively utilizing the expanded wirable region. Therefore, the degree of integration of the circuit device can be increased.