SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Japanese Patent JPS6164142

A

PURPOSE:To mount a filter having excellent high-frequency characteristics, and to reduce spike current induced in a power supply by interposing a capacitor between a power supply wire in a semiconductor chip and a ground wire. CONSTITUTION:An N type (or a P type) diffusion layer 11 is formed onto an N type (or a P type) silicon substrate 10, and a polycrystalline silicon layer 13 is laminated onto the diffusion layer 11 through an insulating layer 12. An insulating layer 14, a first wiring layer 15, an insulating layer 16 and a second wiring layer 17 are laminated onto the polycrystalline silicon layer 13 in succession. In this case, the diffusion layer 11 and the first wiring layer 15 are connected interlayer state as a wire such as a power supply wire VDD (or a ground wire VSS), and the polycrystalline silicon layer 13 and the second wiring layer 17 are connected hierarchically as a wire such as the ground wire VSS (or the power supply wire). Accordingly, structure in which a capacitor is inserted directly between the ground wire VSS and the power supply wire VDD, thus sufficiently reducing spike currents induced in a power supply.

HAJI YASUTAKA

JP18687084A

April 02, 1986

September 06, 1984

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TOSHIBA CORP

H01L27/04; H01L21/768; H01L21/822; H01L23/522; (IPC1-7): H01L27/04

Takehiko Suzue

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