Title:
SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS PREPARING METHOD
Document Type and Number:
Japanese Patent JPS52149076
Kind Code:
A
Abstract:
PURPOSE: To permit insulating separation of an element by making use of an insulating layer provided inside a single crystal semiconductor by ion-injection method, which layer is positioned in parallel to and followed closely by the surface of the semiconductor.
Inventors:
OKUHARA SHINJI
Application Number:
JP6451376A
Publication Date:
December 10, 1977
Filing Date:
June 04, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/00; H01L21/02; H01L21/265; H01L21/76; H01L21/822; H01L27/04; H01L27/12; (IPC1-7): H01L21/265; H01L21/76; H01L21/94; H01L27/04