Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2003249563
Kind Code:
A
Abstract:
To provide a semiconductor integrated circuit which operates at a high speed with little leakage current.
A gate circuit on a critical path is identified by the timing analysis. MT gate cells are composed of a plurality of combined transistors, having a low threshold voltage with transistors having a high threshold voltage. Those transistors (switching section), having the high threshold voltage in the MT gate cells whose output voltages do not change at the same or nearly at the same timing, are made common thereto.
Inventors:
MUSHIGA MUNEHITO
SETA KATSUHIRO
YOSHIMOTO TAKESHI
FURUSAWA TOSHIYUKI
SETA KATSUHIRO
YOSHIMOTO TAKESHI
FURUSAWA TOSHIYUKI
Application Number:
JP2002049125A
Publication Date:
September 05, 2003
Filing Date:
February 26, 2002
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA MICRO ELECTRONICS
TOSHIBA MICRO ELECTRONICS
International Classes:
H01L21/82; H01L27/04; H03K19/00; H01L21/822; (IPC1-7): H01L21/822; H01L21/82; H01L27/04
Attorney, Agent or Firm:
Togawa Hideaki
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