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Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2012257447
Kind Code:
A
Abstract:

To provide a protective circuit that suppresses thermal damage of a power supply circuit and suppresses damage due to heat generation of the power supply circuit, and provide a protective circuit and a power supply circuit with small occupied area and low manufacturing cost.

A semiconductor integrated circuit includes a voltage conversion circuit, and a control circuit having a voltage division circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor whose off current increases as the temperature rises, a capacitor accumulating the off current as charges, a second oxide semiconductor transistor, and an operational amplifier whose non-inversion input terminal receives reference voltage. The first oxide semiconductor transistor is disposed adjacent to a heat generation element of the voltage conversion circuit or the control circuit.


Inventors:
SATO TAKENAO
Application Number:
JP2012113607A
Publication Date:
December 27, 2012
Filing Date:
May 17, 2012
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H02M3/135; G05F3/24; H02M7/06
Domestic Patent References:
JP2004147437A2004-05-20
JP2011089950A2011-05-06
JP2010092037A2010-04-22
JP2003149055A2003-05-21
JP2010063290A2010-03-18
JP2008187894A2008-08-14