Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH0548023
Kind Code:
A
Abstract:

PURPOSE: To enable either a pull-up resistance or a pull-down resistance to be selected arbitrarily by applying an external control signal to both gates of a P-channel MOS transistor and an N-channel MOS transistor.

CONSTITUTION: When a control voltage which is fed to an external control terminal 51 is at a same potential as a power supply voltage VDD, a P-channel MOS transistor 1 is in OFF state and an N-channel MOS transistor is in ON state, thus forming a circuit showing a pull-down resistor. Then, when a control voltage which is fed to the external control terminal 51 is at a same potential as a grounding potential, the P-channel MOS transistor 1 is in ON state and the N-channel MOS transistor 2 is in OFF state, thus forming a circuit showing a pull-up resistor. When the external control terminal 51 is in open state. the P-channel MOS transistor is in ON state, thus forming a circuit showing a pull-up resistor. Therefore, either the pull-up resistor or the pull-down resistor can be selected arbitrarily.


Inventors:
YOSHIDA KAZUHIRO
Application Number:
JP19758591A
Publication Date:
February 26, 1993
Filing Date:
August 07, 1991
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NIPPON ELECTRIC IC MICROCOMPUT
International Classes:
H01L21/8238; H01L27/092; (IPC1-7): H01L27/092
Attorney, Agent or Firm:
Uchihara Shin



 
Next Patent: JPS548024