PURPOSE: To obtain a large current drive capability with a less occupied area of an output transistor (TR) by adopting the constitution that a voltage between gate and source of a P-channel output TR is increased in a positive power supply and a level shifter circuit.

CONSTITUTION: When a potential of the 2nd positive power supply 4 is impressed to an input 5 of a level shifter circuit 9 from TRs 2, 3 being internal logic gates of the pre-stage, a potential of the 1st positive power supply 11 higher than the 2nd power supply 4 is outputted at an output 10 of the level shift circuit 9. Thus, a P-channel output TR 7 is nonconductive and the level of an external output terminal 8 is in the floating state. When a potential of ground 6 is impressed from TRs 2, 3 being the internal logic gates of the pre- stage to an input 5 of the level shifter circuit 9, the potential of ground 6 is outputted at an output 10 of the level shift circuit 9. Thus, the P-channel output TR 7 is conductive and a current flows from the 1st positive power supply 11 to an external output terminal 8. Thus, the current drive capability is improved without increasing the channel width of the P-channel output TR 7.