PURPOSE: To manufacture a MIS type capacitor for an LSI having large electrostatic capacitance per unit area by forming a semiconductor integrated circuit in two layer constitution of parallel connection.

CONSTITUTION: A first capacitor is formed of an N+ type semiconductor layer 2 in an N-type semiconductor substrate 1, a first insulating film 3 of silicon oxide deposited on the layer 2, and a first metallic film 4 of Al, and a second capacitor is formed of the film 4, a second insulating film 5 of silicon oxide deposited on the film 4, and a third metallic film 6 of Al, etc. The film 6 and the layer 2 are connected by a through-hole 7, the second metallic film 8, etc., and consequently these two-layered capacitors are connected in parallel. This two-layer structure and parallel connection allow an LSI MIS capacitor to have an increased capacitance per unit area.