To provide a semiconductor integrated memory circuit capable of trimming all varied threshold value voltages of a plurality of latch circuits together, and a trimming method using the same.

The semiconductor integrated memory circuit includes a latch circuit formed by cross-coupling first and second inverters with first and second nodes, and a voltage application circuit for applying hot carrier generation voltages to the first and second nodes. The circuit further includes an inversion circuit for generating an inverted signal obtained by inverting an amplification signal output from the latch circuit.