SEMICONDUCTOR INTEGRATED VOLUME ACCELERATION SENSOR AND ITS MANUFACTURE

Title:

SEMICONDUCTOR INTEGRATED VOLUME ACCELERATION SENSOR AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH10142254

Kind Code:

A

Abstract:

To provide a high sensitivity integrated acceleration sensor being few in damage during manufacturing.

An acceleration sensor is formed in a part of a separated SIO substrate which has the first and the second single crystal silicon wafer 1, 4 separated by an insulating layer 2 having a space 3. A well 15 is formed inside the second wafer 4 above the cavity 3, and next in order to separate a single crystal silicon mass 23 to form the movable mass 24 of a sensor having two movable electrodes 28a, 28b opposite to two corresponding fixed electrodes 29a, 29b, a groove is formed to the cavity. In a noload state, each of movable electrodes 28 is separated as far as a different distance from the two fixed electrodes 29 opposite to the movable electrode.

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Inventors:

FERRARI PAOLO
FORONI MARIO
VIGNA BENEDETTO
VILLA FLAVIO

Application Number:

JP20508897A

Publication Date:

May 29, 1998

Filing Date:

July 30, 1997

Export Citation:

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Assignee:

SGS THOMSON MICROELECTRONICS

International Classes:

G01P15/02; B81B3/00; B81C1/00; G01P15/08; G01P15/125; H01L29/84; (IPC1-7): G01P15/125; G01P15/02; H01L29/84

Attorney, Agent or Firm:

Takashi Ishida (3 others)

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