Title:
SEMICONDUCTOR ION SENSOR
Document Type and Number:
Japanese Patent JP2002350385
Kind Code:
A
Abstract:
To provide a semiconductor ion sensor that can be used stably for a long time.
The semiconductor ion sensor is formed by disposing an ion sensitive film 11 on a gate oxide film 4. The ion sensitive film 11 is made up of a matrix resin containing plasticizer and an ion sensitive component. The matrix resin, the primary component of which is ethylene-vinyl acetate copolymer, is employed.
Inventors:
YAMADA SHUGO
MAEKAWA TETSUYA
MAEKAWA TETSUYA
Application Number:
JP2001158301A
Publication Date:
December 04, 2002
Filing Date:
May 28, 2001
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
G01N27/414; (IPC1-7): G01N27/414
Attorney, Agent or Firm:
Keisei Nishikawa (1 person outside)