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Title:
SEMICONDUCTOR, AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2007329295
Kind Code:
A
Abstract:

To provide a semiconductor device where the driving current of a pMOSFET is increased by an easily formable method using an existing silicon process, and to provide its manufacturing method.

The pMOSFET having a channel in a <100> direction on a (100) silicon substrate 11 is formed on the semiconductor device. Compression stress is impressed from the vertical direction of the channel by STI 16.

COPYRIGHT: (C)2008,JPO&INPIT


Inventors:
SAITO SHINICHI
HISAMOTO MASARU
KIMURA YOSHINOBU
SUGII NOBUYUKI
TSUCHIYA RYUTA
Application Number:
JP2006159239A
Publication Date:
December 20, 2007
Filing Date:
June 08, 2006
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L21/76; H01L29/78; H01L21/8238; H01L27/08; H01L27/092; H01L29/786
Domestic Patent References:
JPH1154756A1999-02-26
JP2003203989A2003-07-18
JP2006013322A2006-01-12
JP2006507681A2006-03-02
JP2008513973A2008-05-01
JP2008519434A2008-06-05
JP2004087640A2004-03-18
JPS6448462A1989-02-22
Foreign References:
WO2006023159A22006-03-02
Attorney, Agent or Firm:
Manabu Inoue



 
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