SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF

Title:

SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH098414

Kind Code:

A

Abstract:

To provide a semiconductor laser device having a small astigmatic difference, low noise and the stabilized lateral mode from the low output to the high output.

On an N-type GaAs semiconductor board 1, an N-type GaAs buffer layer 2, an N-type Ga0.45Al0.55As first clad layer 3, a Ga0.85Al0.15As active layer 4, a P-type Ga0.45Al0.55As first light guiding layer 5, and a P-type Ga0.8Al0.2 As second light guiding layer 6 are formed. On the second light guiding layer 6, a P-type Ga0.45Al0.55As stripe region 7a is formed, and an N-type Ga0.3Al0.7As current blocking layer 7 is formed on both sides of the stripe region 7a. A P-type Ga0.45Al0.55As second clad layer 8 is formed on the stripe region 7a and the current blocking layer 7, and a P-type GaAs contact layer 9 is formed on the second clad layer 8.

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Inventors:

TAKAYAMA TORU
KONDO OSAMU
KUME MASAHIRO
YOSHIKAWA AKIO
NAITO HIROKI

Application Number:

JP19005495A

Publication Date:

January 10, 1997

Filing Date:

July 26, 1995

Export Citation:

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Assignee:

MATSUSHITA ELECTRONICS CORP

International Classes:

H01L21/205; H01L21/203; H01S5/00; H01S5/065; (IPC1-7): H01S3/18; H01L21/203; H01L21/205

Attorney, Agent or Firm:

Hiroshi Maeda (2 outside)

Next Patent: CURRENT AND THERMAL DIFFUSION ZONA PELLUCIDA FOR SURFACE LUMINESCENCE LASER