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Title:
半導体レーザ装置および光ディスク記録再生装置
Document Type and Number:
Japanese Patent JP4627132
Kind Code:
B2
Abstract:
There is provided a semiconductor laser device implementing a single transverse mode oscillation in an oscillation wavelength of 780 nm band and also having high reliability and long life in high-output driving state, and an optical disk recording and reproducing apparatus with use of the semiconductor laser device. A multiple quantum well active layer 105 is composed of InGaAsP, and a first cladding layer 103 , a second cladding layer 107 , a third cladding layer 109 , and a first current blocking layer 112 are structured from III-V group compound semiconductor containing only As as V group element. Inside the first current blocking layer 112 , a hollow portion 130 is provided in the vicinity of and approximately parallel to the ridge stripe-shaped third cladding layer 109.

Inventors:
Shuichi Hibikawa
Application Number:
JP2001278135A
Publication Date:
February 09, 2011
Filing Date:
September 13, 2001
Export Citation:
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Assignee:
Sharp Corporation
International Classes:
G11B7/125; H01S5/343; G11B7/127; H01L21/205; H01S5/223; H01S5/20; H01S5/34
Domestic Patent References:
JP3064980A
JP2172288A
JP2000114654A
JP2000501571A
JP9064452A
JP7111366A
JP2000151025A
Attorney, Agent or Firm:
Aoyama Aoi
Hiroshi Yamazaki