Title:
半導体レーザ装置
Document Type and Number:
Japanese Patent JP5443356
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer.
Inventors:
Masaki Toyama
Okada Makoto
Horiuchi Osamu
Okada Makoto
Horiuchi Osamu
Application Number:
JP2010519800A
Publication Date:
March 19, 2014
Filing Date:
July 08, 2009
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01S5/028
Domestic Patent References:
| JP2006261222A | 2006-09-28 | |||
| JP2006203162A | 2006-08-03 | |||
| JPS5994892A | 1984-05-31 | |||
| JPS6481289A | 1989-03-27 | |||
| JP2006186228A | 2006-07-13 | |||
| JP2007061806A | 2007-03-15 | |||
| JP2003037328A | 2003-02-07 | |||
| JP2006228826A | 2006-08-31 | |||
| JP2006190797A | 2006-07-20 |
Attorney, Agent or Firm:
Masahiko Hinataji