Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JPH01196886
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor laser device having excellent reliability by filling the insides of trenches on both sides of a ridge with TiO2. CONSTITUTION:An N-Ga0.5Al0.5As layer 2, a Ga0.85Al0.15As layer 3, a P-Ga0.5 Al0.5As layer 4 and a P-GaAs layer 5 are grown onto an N-GaAs substrate 1 through an MO-CVD method. Trenches are cut up to the substrate 1 through reactive ion etching so that ridge width is brought to 3mum. TiO2 on the GaAs layer 5 on a ridge is removed through dry etching. AuGeNi is evaporated on the whole surface on the substrate 1 side and CrAu on the whole surface on the reverse side. Accordingly, a semiconductor laser device having excellent reliability is acquired.
Inventors:
KUME MASAHIRO
YOSHIKAWA AKIO
SUGINO TAKASHI
HIROSE MASANORI
NAKAMURA AKIRA
YAMAMOTO ATSUYA
YOSHIKAWA AKIO
SUGINO TAKASHI
HIROSE MASANORI
NAKAMURA AKIRA
YAMAMOTO ATSUYA
Application Number:
JP2308388A
Publication Date:
August 08, 1989
Filing Date:
February 02, 1988
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Toshio Nakao (1 outside)