PURPOSE: To maintain high condensing accuracy and high yield of production by a method wherein the positional accuracy of a semiconductor and a condensing lens is improved and the condensing lens is formed in excellent configurational preciseness using the existing etching technique by providing the condensing lens closely adhering to the prescribed (light-emitting) surface of the semiconductor laser.

CONSTITUTION: A diffraction grating type lens 11 is formed on the surface of the light-transmitting layer 10 of a surface emission laser 14. The diffraction grating type lens 11 is formed in flase shape, and flased angle θ is set in a large value from the circumferential part to center part 11C so that the focal length has a positive value. Besides, the center part 11C of the diffraction grating type lens 11 is positioned on the point of intersection P1 of a 45°-inclined surface 13 and an InGaAs active layer 7.