PURPOSE: To contain a plurality of semiconductor lasers and light receiving elements which can be independently modulated in the same chip by a method wherein the device is divided into two by providing grooves in the direction of laser resonator and vertical direction, and thus one is defined as the laser array part, and the other is defined as the light receiving element array part.
CONSTITUTION: A double hetero-structure composed of an N type Ga1-yAlyAs clad layer 2, an undoped Ga1-xAlxAs active layer 3, a P type Ga1-yAlyAs layer 4, and an N type GaAs cap layer 5 is formed on the surface of an N type GaAs substrate 1. Next, the window of an Al2O3 film is formed in the direction [110] of a wafer, and then P+ diffused regions 8 is formed by selectively diffusing Zn. While, the grooves 9 and 10 reaching the N type clad layer or the GaAs substrate are formed. The groove 9 divides the laser part and the light receiving part, and the groove 10 is an electric isolation groove. Finally, a P-side electrode 6 and an N-side electrode 7 are provided.
YAMASHITA SHIGEO
OOUCHI HIROBUMI
