Title:
SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3270815
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce diffusion of a dopant that affects characteristics and reliability by growing a current block layer that constitutes one of a lamination structure, while applying light at each stripe width that becomes a waveguide.
SOLUTION: A substrate (wafer) 1 is set onto a susceptor 22, the inside of a growth room 20 is heated under hydrogen atmosphere, AsH is allowed to flow, a buffer layer 2 is grown, and a clad layer 3, an active layer 4, and a clad layer 5 are grown successively. Then, an Ar laser 25 is oscillated with 1-2 W output. Then, while a laser beam 30 with a beam diameter of &phiv 1.0mm is scanned by each stripe width of 4.0μm that is to become a waveguide by means of a photo-excited scanning optical system 26, trimethyl gallium and Si2H6 are allowed to flow, thus growing an n-type GaAs block layer. A semiconductor laser can be created by a one-time growth process and heat history at a high temperature can be reduced, thus reducing the diffusion of a dopant that affects characteristics and reliability.
Inventors:
Keisuke Miyazaki
Shinji Kaneiwa
Shinji Kaneiwa
Application Number:
JP26103996A
Publication Date:
April 02, 2002
Filing Date:
October 01, 1996
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/205; H01S5/00; H01S5/22; (IPC1-7): H01S5/22; H01L21/205
Domestic Patent References:
| JP750446A | ||||
| JP5206035A |
Attorney, Agent or Firm:
Haruyasu Sasaki (2 outside)