To improve reliability with high output oscillation in a semiconductor layer element.

An n-GaAs buffer layer 2, an n-In0.48Ga0.52P lower clad layer 3, an n or i-Inx1Ga1-x1As1-y1Py1 optical waveguide layer 4, an i-GaAs1-y2Py2 tension distortion barrier layer 5, a compression distortion Inx3Ga1-x3As1-y3Py3 quantum well active layer 6, an i-GaAs1-y2Py2 tension distortion barrier layer 7, a p or i-Inx1Ga1-x1As1-y1Py1 upper optical waveguide layer 8, a p-In0.48Ga0.52P first upper clad layer 9, a GaAs etching stop layer 10, a p-In0.48Ga0.52P second upper clad layer 11 and a p-GaAs contact layer 12 are grown on the (100) face of an n-GaAs substrate 1. Two ridge grooves are formed and the p-GaAs contact layer in a part for 30 μm from a resonator end face cleavage position to an element inner direction on the upper face of the ridge part between the two ridge grooves is removed, and a current non-injection area is formed.