SEMICONDUCTOR LASER ELEMENT

Japanese Patent JP2007073999

A

To provide a semiconductor laser element with excellent properties, in which a protective film is formed on a semiconductor layer so as not to deteriorate element properties.

A semiconductor laser element includes a semiconductor layer having an active layer sandwiched by an n-type layer and a p-type layer on a substrate, the semiconductor layer having a resonator surface and a projection portion projecting in an emission direction from the resonator surface; wherein the resonator surface and an end face of the projection portion are formed by etching, a protective film is formed continuously from the resonator surface to the end face of the projection portion, a surface of the substrate is partially exposed, the protective film is formed so as to reach the surface of the substrate, and a largest angle, at which light emitted from the resonator surface can be radiated without being intercepted by the projection portion and the protective film provided on the projection portion, is defined as a critical angle of radiation, the critical angle of radiation being larger than a half angle of radiation in vertical luminous radiation distribution of laser light emitted from the resonator surface.

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FURUKAWA YOSHIHIKO
SHIMADA MAKOTO
KIUCHI AKIYOSHI
OCHIAI MASANAO
SENOO MASAYUKI

JP2006337984A

March 22, 2007

December 15, 2006

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NICHIA KAGAKU KOGYO KK

H01S5/10; H01S5/028; H01S5/02

JPH1174615A	1999-03-16
JPH09223844A	1997-08-26
JPH08191171A	1996-07-23

Yukio Ono
Horikawa Kaori

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