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Patent Searching and Data


Title:
SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2005322849
Kind Code:
A
Abstract:

To provide stably a semiconductor laser with excellent quality.

There is provided the semiconductor laser provided with an n-InP substrate 1; a multilayer film provided on the n-InP substrate 1 and including a distortion MQW active layer 6; a p side electrode 18 arranged on the multilayer film; a pair of grooves 15 located at both sides of the p side electrode 18, for separating the multilayer film and reaching the n-InP substrate 1; and a plurality of diffraction gratings provided to a region from the one of a pair of the grooves 15 over the other on a diffraction grating forming face located on an upper side of the n-InP substrate 1, or an upper side of any semiconductor film included in the multilayer film.


Inventors:
OKUDA TETSURO
Application Number:
JP2004000141386
Publication Date:
November 17, 2005
Filing Date:
May 11, 2004
Export Citation:
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Assignee:
NEC COMPOUND SEMICONDUCTOR
International Classes:
G02B5/18; G03F7/20; H01S3/08; H01S5/00; H01S5/12; H01S5/227; H01S5/042; H01S5/22; H01S5/323; H01S5/343; (IPC1-7): H01S5/12; G02B5/18; G03F7/20
Attorney, Agent or Firm:
速水 進治