To provide a semiconductor laser having a structure where fluctuation of FFP is suppressed at a low output for reading and at a high output for writing while end face breakage due to COD is prevented even at a high output, with no increase in operation current.
On a substrate 1, a light emission layer forming part 9 is laminated which comprises an n-type clad layer 2 and a p-type second clad layer 6 where an active layer 3 and a stripe-like ridge 14 are formed. An n-type current constriction layer 10 is provided on the slope side wall of the ridge 14 and the flat semiconductor layer surface where no ridge 14 is formed, on which a contact layer 11 is provided that comprises such material as absorbs the light emitted from the light emission layer forming part 9. Relating to the contact layer 11, the part above the ridge 14 and the side wall of it are removed at an end face A and its vicinity. It remains up to the end face A on the current constriction layer 10b provided on the flat semiconductor layer surface.
ISHIKAWA TSUTOMU
KITAJIMA HISAYOSHI
NAKANO YOSUKE
| JPH08307003A | 1996-11-22 | |||
| JP2001210907A | 2001-08-03 | |||
| JPH08307003A | 1996-11-22 | |||
| JP2001210907A | 2001-08-03 |
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