Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3353870
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To dispense with pole structure, and prevent the occurrence of abnormal growth at the junction of an optical waveguide path, and besides, make the shape error of the opening of a selective growth film hard to be influenced, at the time of formation of the laser structure by selective growth, as regards a short resonator semiconductor laser.
SOLUTION: For a semiconductor laser, a first AlGaAs clad layer 3, a GaAs active layer 4, and a second AlGaAs clad layer 5 are stacked in the shape of a triangle pole, in the opening not covered with an insulating layer 2, besides being the surface of a compound semiconductor substrate 1 where (111) B face is the main surface. For example three pieces of laser beam takeout optical waveguide paths 21 are made integrally at this semiconductor laser body 20, thus this semiconductor laser is equipped with a double hetero junction constituted of a triangular compound semiconductor layer surrounded by the flank consisting of the {110} face vertical to the compound semiconductor substrate 1.
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Inventors:
Seigo Ando
Naoki Kobayashi
Hiroaki Ando
Naoki Kobayashi
Hiroaki Ando
Application Number:
JP6074396A
Publication Date:
December 03, 2002
Filing Date:
March 18, 1996
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01S5/00; H01S5/042; H01S5/10; (IPC1-7): H01S5/10
Domestic Patent References:
| JP5167181A | ||||
| JP340480A | ||||
| JP6276585A | ||||
| JP5878489A | ||||
| JP613700A | ||||
| JP870160A |
Other References:
Ｊｏｕｒｎａｌ ｏｆ Ｌｉｇｈｔｗａｖｅ Ｔｅｃｈｎｏｌｏｇｙ，１９９４年，１２［２］，ｐ．２０２−２０７
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)
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