PURPOSE: To obtain a semiconductor laser in which the moving distance of beam and the length of a resonator can be set independently.
CONSTITUTION: In a semiconductor laser where bonding pads are provided on a semiconductor laser chip, a semiconductor layer 2 narrower than the area of a substrate 1 is formed on the substrate to provide a level difference between the substrate 1 and the semiconductor layer 2. An insulating film is then deposited extending from the upper surface to the lower face of the level difference such that the vertical part of the level difference serves as one surface of a laser resonator. Subsequently, a wiring electrode 11 being connected with an electrode for injecting a current into the resonator is formed over the upper and lower surfaces of the level difference and a bonding pad 12 is formed at a part of the lower surface.
NAKAYAMA HIDEO
UEKI NOBUAKI
OTOMA HIROKI
