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Title:
半導体レーザおよび半導体発光素子
Document Type and Number:
Japanese Patent JP3567550
Kind Code:
B2
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Inventors:
Masakatsu Suzuki
Uenoyama Yu
Application Number:
JP26520695A
Publication Date:
September 22, 2004
Filing Date:
October 13, 1995
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01S5/00; H01L33/06; H01L33/12; H01L33/32; H01S5/323; H01S5/343; (IPC1-7): H01S5/323; H01L33/00
Domestic Patent References:
JP8111558A
JP2229475A
JP8255932A
JP846298A
Other References:
Hiroshi Amano, Kazumasa Hiramatsu and Isamu Akasaki,Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 \b,Jpn. J. Appl. Phys.,日本,1988年,Vol. 27,L1384-L1386
A. T. Meney, E. P. O'Reilly,Theory of optical gain in ideal GaN heterostructure lasers,Applied Physics Letters,米国,1995年,Vol.67, No.20,p.3013-3015
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito



 
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